70nm GaAs/InGaAs技术中的Ka / v波段自偏置LNAs

2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) Pub Date : 2018-07-02 DOI:10.1109/PRIME.2018.8430364

G. Polli, M. Vittori, W. Ciccognani, S. Colangeli, F. Costanzo, A. Salvucci, E. Limiti

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引用次数: 8

摘要

本文介绍了两种LNAs，设计用于Ka和V波段，并在70 nm GaAs/InGaAs技术中实现。两种放大器都采用两级结构，分别采用源反馈和自偏置网络，以提高噪声性能并简化外部电路。实现的mmic的总面积为3x1.2 mm2和3x1 mm2。在27-31.5 GHz范围内，ka波段放大器的噪声系数低于1.5 dB，增益在16 - 18 dB之间。v波段LNA在4751 GHz频段的噪声系数为1.7 dB，相关增益在14.5 dB和15.5 dB之间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Ka-/V-band self-biased LNAs in 70 nm GaAs/InGaAs Technology

In this paper, two LNAs, designed to operate in Ka and V bands, and realized in a 70 nm GaAs/InGaAs technology, are presented. Both amplifiers have a 2-stage structure featured by source feedback and self-biasing networks to improve noise performance and to simplify the external circuitry, respectively. Total area occupation of the realized MMICs is 3x1.2 mm2 and 3x1 mm2. The Ka-band amplifier exhibits a noise figure lower than 1.5 dB over 27–31.5 GHz and a gain between 16 dB and 18 dB. The V-band LNA has a 1.7 dB noise figure in the 4751 GHz band, with an associated gain between 14.5 dB and 15.5 dB.

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2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)

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