A1N缓冲层上生长多晶3C-SiC的电学特性

2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI:10.1109/SIBEDM.2007.4292898

Kan-San Kim, G. Chung

{"title":"A1N缓冲层上生长多晶3C-SiC的电学特性","authors":"Kan-San Kim, G. Chung","doi":"10.1109/SIBEDM.2007.4292898","DOIUrl":null,"url":null,"abstract":"This paper describes the characteristics of poly (Polycrystalline) 3C-SiC grown on SiO2 and AIN buffer layers by CVD. FT-IR was used to obtain the crystallinity and Si-C bonding structure of the poly 3C-SiC according to various growth temperatures and buffer layers. The surface chemical composition and the electron mobility of the poly 3C-SiC grown on each buffer layers were investigated by XPS and Hall effect.","PeriodicalId":106151,"journal":{"name":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical Characteristics of Polycrystalline 3C-SiC Grown on A1N Buffer Layer\",\"authors\":\"Kan-San Kim, G. Chung\",\"doi\":\"10.1109/SIBEDM.2007.4292898\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the characteristics of poly (Polycrystalline) 3C-SiC grown on SiO2 and AIN buffer layers by CVD. FT-IR was used to obtain the crystallinity and Si-C bonding structure of the poly 3C-SiC according to various growth temperatures and buffer layers. The surface chemical composition and the electron mobility of the poly 3C-SiC grown on each buffer layers were investigated by XPS and Hall effect.\",\"PeriodicalId\":106151,\"journal\":{\"name\":\"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-08-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIBEDM.2007.4292898\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBEDM.2007.4292898","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文介绍了用CVD法在SiO2和AIN缓冲层上生长多晶3C-SiC的特性。利用FT-IR分析了不同生长温度和不同缓冲层下聚3C-SiC的结晶度和Si-C键合结构。利用XPS和霍尔效应研究了在各缓冲层上生长的聚3C-SiC的表面化学组成和电子迁移率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Electrical Characteristics of Polycrystalline 3C-SiC Grown on A1N Buffer Layer

This paper describes the characteristics of poly (Polycrystalline) 3C-SiC grown on SiO2 and AIN buffer layers by CVD. FT-IR was used to obtain the crystallinity and Si-C bonding structure of the poly 3C-SiC according to various growth temperatures and buffer layers. The surface chemical composition and the electron mobility of the poly 3C-SiC grown on each buffer layers were investigated by XPS and Hall effect.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials

自引率

0.00%

发文量