超小型v槽无结晶体管的量子输运模拟

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI:10.1109/IMFEDK.2014.6867053

Tatsuya Yamana, N. Mori

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引用次数: 0

摘要

在弹道条件下，对n型超小型v型槽无结场效应晶体管(jl - fet)进行了非平衡格林函数模拟。我们发现导通电流主要由隙厚决定，当栅极长度为7.2 nm时，亚阈值摆幅在隙厚约0.6 nm处达到最小。

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Quantum transport simulation of ultra-small V-groove junctionless transistors

We have performed non-equilibrium Green's function simulation of n-type ultra-small V-groove junctionless field-effect transistors (JL-FETs) on a silicon-on-insulator substrate under the ballistic condition. We find that the ON-current is determined mainly by the gap thickness and the subthreshold swing becomes the minimum at a gap-thickness of about 0.6 nm for the gate-length of 7.2 nm.

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2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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