具有后门控制的多栅极mosfet

2006 IEEE International Conference on IC Design and Technology Pub Date : 2006-08-14 DOI:10.1109/ICICDT.2006.220797

T. Hiramoto, T. Nagumo

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引用次数: 8

摘要

在本文中，我们开发了一个多栅极MOSFET的设计准则，用于Vth控制。通过三维器件仿真，给出了在hp45节点LSTP器件中获得足够大伽马和抑制SCE的通道高度(tSi)和通道宽度(wSi)的设计窗口。伽马的通道宽度依赖性也进行了实验检验

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Multi-Gate MOSFETs with Back-Gate Control

In this paper, we develop a design guideline for multi-gate MOSFET for Vth control. The design window of channel height (tSi) and width (wSi) to obtain both sufficiently large gamma and suppressed SCE in hp45 node LSTP devices is shown by 3D device simulation. The channel width dependence of gamma is also experimentally examined

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2006 IEEE International Conference on IC Design and Technology

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