{"title":"在SPICE建模沟mosfet","authors":"J. Zarebski, K. Górecki","doi":"10.1109/ICECS.2008.4674794","DOIUrl":null,"url":null,"abstract":"In the paper the isothermal model of TrenchMOSFETs offered by the producer of these devices and the electrothermal model of these devices proposed by the authors were presented. The results of the experimental verification of both the models are given as well.","PeriodicalId":404629,"journal":{"name":"2008 15th IEEE International Conference on Electronics, Circuits and Systems","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Modelling TrenchMOSFETs in SPICE\",\"authors\":\"J. Zarebski, K. Górecki\",\"doi\":\"10.1109/ICECS.2008.4674794\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the paper the isothermal model of TrenchMOSFETs offered by the producer of these devices and the electrothermal model of these devices proposed by the authors were presented. The results of the experimental verification of both the models are given as well.\",\"PeriodicalId\":404629,\"journal\":{\"name\":\"2008 15th IEEE International Conference on Electronics, Circuits and Systems\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 15th IEEE International Conference on Electronics, Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECS.2008.4674794\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 15th IEEE International Conference on Electronics, Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2008.4674794","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In the paper the isothermal model of TrenchMOSFETs offered by the producer of these devices and the electrothermal model of these devices proposed by the authors were presented. The results of the experimental verification of both the models are given as well.
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