现场可编程SONOS ESD保护设计

Proceedings of the IEEE 2012 Custom Integrated Circuits Conference Pub Date : 2012-10-15 DOI:10.1109/CICC.2012.6330711

Jian Liu, Zitao Shi, Xin Wang, H Zhao, L. Wang, Chen Zhang, Z. Dong, L. Lin, Albert Z. H. Wang, Yuhua Cheng, Bin Zhao

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引用次数: 3

摘要

本文首次报道了基于sonos的现场可编程ESD保护的概念和结构。在130nm CMOS上的原型显示出~2V的宽ESD触发调谐范围和1.2pA的超低漏损。它为复杂的集成电路提供了后si片上/系统ESD设计可编程性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Field programmable SONOS ESD protection design

This paper reports the first SONOS-based field-programmable ESD protection concept and structure. Prototype in 130nm CMOS demonstrates wide ESD triggering tuning range of ~2V and ultra low leakage of 1.2pA. It enables post-Si on-chip/in-system ESD design programmability for complex ICs.

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Proceedings of the IEEE 2012 Custom Integrated Circuits Conference

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