常关双栅Ga2O3平面MOSFET和FinFET具有高离子和BV

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-01 DOI:10.1109/ISPSD.2018.8393682

H. Wong, N. Braga, R. Mickevicius, F. Ding

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引用次数: 7

摘要

Ga2O3具有大的带隙和廉价的原生衬底，是一种很有前途的电力电子宽带隙材料。然而，由于技术上的困难，只能很容易地制造出正常on的n型无结MOSFET (Vth < 0 V)。我们建议使用双栅极结构来实现Ga2O3平面MOSFET和FinFET的正常关断器件。通过校准参数的TCAD仿真，发现在允许更高掺杂的情况下，双栅平面器件和FinFET的通流(ION)分别提高了6倍和1倍，而击穿电压没有牺牲。

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Normally-OFF dual-gate Ga2O3 planar MOSFET and FinFET with high ION and BV

Ga2O3 is a promising Wide-Band-Gap material for power electronics due to its large bandgap and inexpensive native substrate. However, due to technological difficulties, only normally-ON n-type junctionless MOSFET (Vth < 0 V) can be made easily. We propose using dual-gate configuration to achieve normally-OFF device for both Ga2O3 planar MOSFET and FinFET. Through TCAD simulations with calibrated parameters, it is found that normally-OFF dual-gate planar device and FinFET can be achieved with 6X and 1X enhancement in ON-current (ION), respectively, as higher doping is allowed, while breakdown voltage is not sacrificed.

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来源期刊

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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