{"title":"一个10MS/s 11-b 0.19mm/sup /算法ADC与改进的时钟","authors":"Min Gyu Kim, P. Hanumolu, U. Moon","doi":"10.1109/VLSIC.2006.1705306","DOIUrl":null,"url":null,"abstract":"A 10Ms/s 11-b algorithmic ADC with an active area of 0.19mm2 is presented. Using an improved clocking scheme, this design overcomes the speed limit of algorithmic ADCs. The proposed ADC employs amplifier sharing, DC offset cancellation, and input memory effect suppression to reduce area and power, and achieve high linearity. The ADC implemented in a 0.13mum thick gate-oxide CMOS process achieves 69dB SFDR, 58dB SNR, and 56dB SNDR, while consuming 3.5mA from 3V supply","PeriodicalId":366835,"journal":{"name":"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 10MS/s 11-b 0.19mm/sup 2/ Algorithmic ADC with Improved Clocking\",\"authors\":\"Min Gyu Kim, P. Hanumolu, U. Moon\",\"doi\":\"10.1109/VLSIC.2006.1705306\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 10Ms/s 11-b algorithmic ADC with an active area of 0.19mm2 is presented. Using an improved clocking scheme, this design overcomes the speed limit of algorithmic ADCs. The proposed ADC employs amplifier sharing, DC offset cancellation, and input memory effect suppression to reduce area and power, and achieve high linearity. The ADC implemented in a 0.13mum thick gate-oxide CMOS process achieves 69dB SFDR, 58dB SNR, and 56dB SNDR, while consuming 3.5mA from 3V supply\",\"PeriodicalId\":366835,\"journal\":{\"name\":\"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2006.1705306\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2006.1705306","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 10MS/s 11-b 0.19mm/sup 2/ Algorithmic ADC with Improved Clocking
A 10Ms/s 11-b algorithmic ADC with an active area of 0.19mm2 is presented. Using an improved clocking scheme, this design overcomes the speed limit of algorithmic ADCs. The proposed ADC employs amplifier sharing, DC offset cancellation, and input memory effect suppression to reduce area and power, and achieve high linearity. The ADC implemented in a 0.13mum thick gate-oxide CMOS process achieves 69dB SFDR, 58dB SNR, and 56dB SNDR, while consuming 3.5mA from 3V supply
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