Sub 50 nm InP HEMT, fT = 586 GHz，放大器电路增益为390 GHz，适用于亚毫米波应用

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516002

R. Lai, X. Mei, S. Sarkozy, W. Yoshida, P. Liu, J. Lee, M. Lange, V. Radisic, K. Leong, W. Deal

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