(000-1) c面上的4H-SiC引脚二极管，正向降解减少

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.240153

K. Nakayama, Y. Sugawara, H. Tsuchida, Toshiyuki Miyanagi, I. Kamata, T. Nakamura, K. Asano, D. Takayama

{"title":"(000-1) c面上的4H-SiC引脚二极管，正向降解减少","authors":"K. Nakayama, Y. Sugawara, H. Tsuchida, Toshiyuki Miyanagi, I. Kamata, T. Nakamura, K. Asano, D. Takayama","doi":"10.1109/WCT.2004.240153","DOIUrl":null,"url":null,"abstract":"The dependence of a pin diode's forward voltage degradation on device structures and crystal faces has been investigated. This investigation clarified for the first time that forward voltage degradation is reduced by fabricating the diodes on the (000-1) C-face off-angled toward <11-20>. High voltage 4H-SiC pin diodes on the (000-1) C-face with reduced forward degradation have also been fabricated successfully. A pin diode's highest breakdown voltage of 4.6 kV is achieved, and /spl Delta/V/sub f/ reduces to 0.04 V.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"4H-SiC pin diodes on the (000-1) C-face with reduced forward degradation\",\"authors\":\"K. Nakayama, Y. Sugawara, H. Tsuchida, Toshiyuki Miyanagi, I. Kamata, T. Nakamura, K. Asano, D. Takayama\",\"doi\":\"10.1109/WCT.2004.240153\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The dependence of a pin diode's forward voltage degradation on device structures and crystal faces has been investigated. This investigation clarified for the first time that forward voltage degradation is reduced by fabricating the diodes on the (000-1) C-face off-angled toward <11-20>. High voltage 4H-SiC pin diodes on the (000-1) C-face with reduced forward degradation have also been fabricated successfully. A pin diode's highest breakdown voltage of 4.6 kV is achieved, and /spl Delta/V/sub f/ reduces to 0.04 V.\",\"PeriodicalId\":303825,\"journal\":{\"name\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-05-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WCT.2004.240153\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCT.2004.240153","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了引脚二极管的正向电压衰减与器件结构和晶体表面的关系。本研究首次阐明了在(000-1)c面斜向制造二极管可减少正向电压退化。在(000-1)c面上成功制备了正向退化减小的高压4H-SiC引脚二极管。引脚二极管的最高击穿电压达到4.6 kV， /spl Delta/V/sub f/降至0.04 V。

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4H-SiC pin diodes on the (000-1) C-face with reduced forward degradation

The dependence of a pin diode's forward voltage degradation on device structures and crystal faces has been investigated. This investigation clarified for the first time that forward voltage degradation is reduced by fabricating the diodes on the (000-1) C-face off-angled toward <11-20>. High voltage 4H-SiC pin diodes on the (000-1) C-face with reduced forward degradation have also been fabricated successfully. A pin diode's highest breakdown voltage of 4.6 kV is achieved, and /spl Delta/V/sub f/ reduces to 0.04 V.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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