Yafen Yang, Kai Zhang, Yi Gu, Parameswari Raju, Qiliang Li, Li Ji, Lin Chen, D. Ioannou, Q. Sun, D. Zhang, Hao Zhu
{"title":"陡坡负量子电容场效应晶体管","authors":"Yafen Yang, Kai Zhang, Yi Gu, Parameswari Raju, Qiliang Li, Li Ji, Lin Chen, D. Ioannou, Q. Sun, D. Zhang, Hao Zhu","doi":"10.1109/IEDM45625.2022.10019359","DOIUrl":null,"url":null,"abstract":"For the first time, we report the design and fabrication of a steep-slope negative quantum capacitance field-effect transistor (NQCFET) with a single-layer (SL)-graphene encapsulated in the gate stack of a MoS2 FET. Subthermionic steep switching is achieved with a minimum subthreshold slope (SS) of 31 mV/dec with negligible hysteresis. The contribution of negative quantum capacitance from the low density of states in the electron system in SL-graphene has been experimentally and theoretically explored.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Steep-Slope Negative Quantum Capacitance Field-Effect Transistor\",\"authors\":\"Yafen Yang, Kai Zhang, Yi Gu, Parameswari Raju, Qiliang Li, Li Ji, Lin Chen, D. Ioannou, Q. Sun, D. Zhang, Hao Zhu\",\"doi\":\"10.1109/IEDM45625.2022.10019359\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For the first time, we report the design and fabrication of a steep-slope negative quantum capacitance field-effect transistor (NQCFET) with a single-layer (SL)-graphene encapsulated in the gate stack of a MoS2 FET. Subthermionic steep switching is achieved with a minimum subthreshold slope (SS) of 31 mV/dec with negligible hysteresis. The contribution of negative quantum capacitance from the low density of states in the electron system in SL-graphene has been experimentally and theoretically explored.\",\"PeriodicalId\":275494,\"journal\":{\"name\":\"2022 International Electron Devices Meeting (IEDM)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM45625.2022.10019359\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM45625.2022.10019359","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
For the first time, we report the design and fabrication of a steep-slope negative quantum capacitance field-effect transistor (NQCFET) with a single-layer (SL)-graphene encapsulated in the gate stack of a MoS2 FET. Subthermionic steep switching is achieved with a minimum subthreshold slope (SS) of 31 mV/dec with negligible hysteresis. The contribution of negative quantum capacitance from the low density of states in the electron system in SL-graphene has been experimentally and theoretically explored.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
