多mgy总电离剂量诱导的MOSFET可变性对辐射硬化CMOS图像传感器性能的影响

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-02 DOI:10.1109/RADECS.2017.8696140

S. Rizzolo, V. Goiffon, M. Sergent, F. Corbière, S. Rolando, A. Chabane, P. Paillet, C. Marcandella, S. Girard, P. Magnan, M. Van Uffelen, Laura Mont Casellas, R. Scott, W. De Cock

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引用次数: 4

摘要

在大约65000个器件上统计研究了辐照CIS高达10 MGy(SiO2)的mosfet变异性。识别了不同的变异性来源，并阐明了组成读出链的晶体管所起的作用。

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Multi-MGy Total Ionizing Dose Induced MOSFET Variability Effects on Radiation Hardened CMOS Image Sensor Performances

MOSFETs variability in irradiated CIS up to 10 MGy(SiO2) is statistically investigated on about 65000 devices. Different variability sources are identified and the role played by the transistors composing the readout chain is clarified.

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来源期刊

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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