P. Singh, G. Bisht, R. Hofmann, K. Singh, S. Mahapatra
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Dual Layer Pt Metal Nanocrystal Flash for Multi-Level-Cell NAND Application
Most of the current high-density Flash cells use multi-level-cell (MLC) technology to store 2-bits/cell to increase memory density. In this work, dual layer metal nanocrystal (NC) flash EEPROM device, with large memory window, good retention and 10
4
cycle endurance is reported. High-temperature retention, gate bias accelerated retention, read disturb and post- cycling retention measurements show excellent reliability of the NC devices which make them suitable for the MLC application.
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