重离子微束作用下SiC结势垒肖特基二极管的泄漏电流退化

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI:10.1109/IPFA47161.2019.8984872

Shu-rui Cao, Qingkui Yu, Guanghua Du, Jinlong Guo, Wang He, Hongwei Zhang, Sun Yi

{"title":"重离子微束作用下SiC结势垒肖特基二极管的泄漏电流退化","authors":"Shu-rui Cao, Qingkui Yu, Guanghua Du, Jinlong Guo, Wang He, Hongwei Zhang, Sun Yi","doi":"10.1109/IPFA47161.2019.8984872","DOIUrl":null,"url":null,"abstract":"Leakage current degradation of SiC junction barrier Schottky diodes were studied under heavy ion microbeam. Leakage current increased linearly with fluence and was positively related to bias voltage. It was proposed that leakage current occurred as a result of the accumulation of multiple leakage paths. The explanation that the increased leakage current was related to leakage paths formed by damage in the mechanism of \"micro-SEB\" was verified.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Leakage Current Degradation in SiC Junction Barrier Schottky Diodes under Heavy Ion Microbeam\",\"authors\":\"Shu-rui Cao, Qingkui Yu, Guanghua Du, Jinlong Guo, Wang He, Hongwei Zhang, Sun Yi\",\"doi\":\"10.1109/IPFA47161.2019.8984872\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Leakage current degradation of SiC junction barrier Schottky diodes were studied under heavy ion microbeam. Leakage current increased linearly with fluence and was positively related to bias voltage. It was proposed that leakage current occurred as a result of the accumulation of multiple leakage paths. The explanation that the increased leakage current was related to leakage paths formed by damage in the mechanism of \\\"micro-SEB\\\" was verified.\",\"PeriodicalId\":169775,\"journal\":{\"name\":\"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA47161.2019.8984872\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA47161.2019.8984872","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 13

摘要

研究了重离子微束作用下SiC结势垒肖特基二极管的漏电流退化。泄漏电流随流量线性增加，与偏置电压呈正相关。提出了泄漏电流的产生是多个泄漏路径累积的结果。验证了泄漏电流增大与“微seb”机制中损伤形成的泄漏通路有关的解释。

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Leakage Current Degradation in SiC Junction Barrier Schottky Diodes under Heavy Ion Microbeam

Leakage current degradation of SiC junction barrier Schottky diodes were studied under heavy ion microbeam. Leakage current increased linearly with fluence and was positively related to bias voltage. It was proposed that leakage current occurred as a result of the accumulation of multiple leakage paths. The explanation that the increased leakage current was related to leakage paths formed by damage in the mechanism of "micro-SEB" was verified.

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来源期刊

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)

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