场镀InAlAs-InGaAs hemt的TCAD优化

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516397

D. Saguatti, A. Chini, G. Verzellesi, M. Isa, K. Ian, M. Missous

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引用次数: 1

摘要

具有优化场极板结构的高电压InGaAs-InAlAs hemt正在开发中。它们的设计采用了TCAD方法。二维器件模拟已经初步校准，通过比较来自基线InP HEMT技术的直流和射频测量，其中场板被纳入。然后利用模拟设计了具有最佳长度和钝化厚度的场板结构。

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TCAD optimization of field-plated InAlAs-InGaAs HEMTs

High-voltage InGaAs-InAlAs HEMTs featuring optimized field-plate structures are being developed. A TCAD approach has been adopted for their design. Two-dimensional device simulations have preliminarily been calibrated by comparison with DC and RF measurements from the baseline InP HEMT technology into which the field plate is being incorporated. Simulations have then been used to design field-plate structures with optimal length and passivation thickness.

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来源期刊

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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