一种系统级解决方案,用于管理薄化3D集成电路中的空间温度梯度

A. Annamalai, Raghavan Kumar, Arunkumar Vijayakumar, S. Kundu
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引用次数: 5

摘要

随着传统CMOS技术日益接近规模极限,向堆叠3D集成电路(3D IC)的转变趋势变得越来越重要。3D集成电路提供更低的功耗,更高的集成密度,异构堆叠和更少的互连延迟。在3D集成电路堆栈中,除了底层外,所有层都被减薄以实现硅通孔(TSV)。然而,衬底变薄增加了横向热阻,导致层内温度梯度升高,可能导致性能下降甚至功能错误。在这项工作中,我们研究了衬底减薄对三维集成电路中各层温度分布的影响。我们的模拟结果表明,层内温度梯度可以高达57℃。通常,传统的静态解决方案会导致效率极低的设计。为此,我们提出了一种系统级态势感知集成方案,该方案执行机会性线程迁移和动态电压和频率缩放(DVFS),以有效管理热违规,同时相对于独立方案提高系统吞吐量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A system-level solution for managing spatial temperature gradients in thinned 3D ICs
As conventional CMOS technology is approaching scaling limits, the shift in trend towards stacked 3D Integrated Circuits (3D IC) is gaining more importance. 3D ICs offer reduced power dissipation, higher integration density, heterogeneous stacking and reduced interconnect delays. In a 3D IC stack, all but the bottom tier are thinned down to enable through-silicon vias (TSV). However, the thinning of the substrate increases the lateral thermal resistance resulting in higher intra-layer temperature gradients potentially leading to performance degradation and even functional errors. In this work, we study the effect of thinning the substrate on temperature profile of various tiers in 3D ICs. Our simulation results show that the intra-layer temperature gradient can be as high as 57°C. Often, the conventional static solutions lead to highly inefficient design. To this end, we present a system-level situation-aware integrated scheme that performs opportunistic thread migration and dynamic voltage and frequency scaling (DVFS) to effectively manage thermal violations while increasing the system throughput relative to stand-alone schemes.
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