雪崩条件下功率肖特基二极管安全工作区域的研究

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487991

A. Irace, G. Breglio, P. Spirito, A. Bricconi, D. Raffo, L. Merlin

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引用次数: 6

摘要

本文的目的是对功率肖特基二极管反向偏置安全工作区域的限制给出一个见解和可能的解释。一组一致的实验数据，结合理论分析和ATLAS模拟来解释器件故障的可能原因。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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On the safe operating area of power Schottky diodes in avalanche conditions

The aim of this paper is to give an insight and a possible explanation of the limitations in the reverse bias safe operating area of power Schottky diodes. A consistent set of experimental data together with theoretical analysis and ATLAS simulations are presented to explain possible reasons of device failures.

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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