VHDL结构数据路径的架构泄漏功率模拟器

C. Gopalakrishnan, S. Katkoori
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引用次数: 6

摘要

提出了一种用VHDL语言分层描述数据路径的快速RTL泄漏功率模拟器。只有叶单元(如全加法器NAND门等)的漏功率进行表征,在位片级,可以在合理的时间内进行详尽的表征。我们观察到,在暂态状态下,泄漏功率也依赖于前一个输入。这种依赖性也被合并到泄漏模型中。利用特征位片单元库和一组给定的输入,估计了在给定数据路径中耗散的总泄漏能量。与HSPICE估计相比,三种数据路径密集型设计的平均百分比误差为1.38%。估计时间减少了4-5个数量级。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An architectural leakage power simulator for VHDL structural datapaths
We present a fast RTL leakage power simulator for datapaths described hierarchically in VHDL. Only the leafcells such as full adder NAND gate etc., are characterized for leakage power At the bit-slice level, exhaustive characterization can be performed in reasonable time. We observed that in the transient state, the leakage power is dependent on the previous input as well. This dependence is also incorporated into the leakage model. Using the characterized bit-slice cell library and a given set of inputs, the total leakage energy dissipated in a given datapath is estimated. Compared to HSPICE estimates, the average percentage error for three datapath-intensive designs is 1.38%. The estimation times are reduced by 4-5 orders of magnitude.
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