高温下射频偏置应力下自对准边缘钝化7.5 GHz GaAs/AlGaAs HBT功率放大器的可靠性

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-12-31 DOI:10.1109/GAAS.1995.528982

T. Henderson, P. Ikalainen

{"title":"高温下射频偏置应力下自对准边缘钝化7.5 GHz GaAs/AlGaAs HBT功率放大器的可靠性","authors":"T. Henderson, P. Ikalainen","doi":"10.1109/GAAS.1995.528982","DOIUrl":null,"url":null,"abstract":"We report a two-temperature RF bias stress test on nominal 1.2 W 2.5 GHz GaAs/AlGaAs HBT unit cell amplifiers. MTTFs of 2020 and 1340 hours were obtained at Tj=218/spl deg/C and 245/spl deg/C, respectively, under nominal input bias. An activation energy of 0.42 eV is estimated, consistent with published results for similar devices under DC bias stress.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Reliability of self-aligned, ledge passivated 7.5 GHz GaAs/AlGaAs HBT power amplifiers under RF bias stress at elevated temperatures\",\"authors\":\"T. Henderson, P. Ikalainen\",\"doi\":\"10.1109/GAAS.1995.528982\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report a two-temperature RF bias stress test on nominal 1.2 W 2.5 GHz GaAs/AlGaAs HBT unit cell amplifiers. MTTFs of 2020 and 1340 hours were obtained at Tj=218/spl deg/C and 245/spl deg/C, respectively, under nominal input bias. An activation energy of 0.42 eV is estimated, consistent with published results for similar devices under DC bias stress.\",\"PeriodicalId\":422183,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-12-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1995.528982\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.528982","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 12

摘要

我们报告了标称1.2 W 2.5 GHz GaAs/AlGaAs HBT单元放大器的双温度射频偏置应力测试。在标称输入偏置下，在Tj=218/spl℃和245/spl℃/C下，分别获得了2020和1340小时的mttf。估计活化能为0.42 eV，与已发表的类似器件在直流偏置应力下的结果一致。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Reliability of self-aligned, ledge passivated 7.5 GHz GaAs/AlGaAs HBT power amplifiers under RF bias stress at elevated temperatures

We report a two-temperature RF bias stress test on nominal 1.2 W 2.5 GHz GaAs/AlGaAs HBT unit cell amplifiers. MTTFs of 2020 and 1340 hours were obtained at Tj=218/spl deg/C and 245/spl deg/C, respectively, under nominal input bias. An activation energy of 0.42 eV is estimated, consistent with published results for similar devices under DC bias stress.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

自引率

0.00%

发文量