研究功率器件横向温度分布的差分背面激光探测技术

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764095

C. Furbock, R. Thalhammer, M. Litzenberger, N. Seliger, D. Pogany, E. Gornik, G. Wachutka

{"title":"研究功率器件横向温度分布的差分背面激光探测技术","authors":"C. Furbock, R. Thalhammer, M. Litzenberger, N. Seliger, D. Pogany, E. Gornik, G. Wachutka","doi":"10.1109/ISPSD.1999.764095","DOIUrl":null,"url":null,"abstract":"We present a differential backside laser probing technique for the investigation of lateral temperature variations in power devices. The method is applied to analyze the temperature evolution in IGBTs operated under short circuit conditions. The extraction of the temperature from optical modulation signals is supported by electro-thermal device simulations, taking into account sample preparation effects.","PeriodicalId":352185,"journal":{"name":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","volume":"225 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A differential backside laserprobing technique for the investigation of the lateral temperature distribution in power devices\",\"authors\":\"C. Furbock, R. Thalhammer, M. Litzenberger, N. Seliger, D. Pogany, E. Gornik, G. Wachutka\",\"doi\":\"10.1109/ISPSD.1999.764095\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a differential backside laser probing technique for the investigation of lateral temperature variations in power devices. The method is applied to analyze the temperature evolution in IGBTs operated under short circuit conditions. The extraction of the temperature from optical modulation signals is supported by electro-thermal device simulations, taking into account sample preparation effects.\",\"PeriodicalId\":352185,\"journal\":{\"name\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"volume\":\"225 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1999.764095\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1999.764095","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

我们提出了一种用于研究功率器件横向温度变化的差分背面激光探测技术。将该方法应用于igbt在短路工况下的温度演化分析。考虑到样品制备效应，电热装置模拟支持从光调制信号中提取温度。

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A differential backside laserprobing technique for the investigation of the lateral temperature distribution in power devices

We present a differential backside laser probing technique for the investigation of lateral temperature variations in power devices. The method is applied to analyze the temperature evolution in IGBTs operated under short circuit conditions. The extraction of the temperature from optical modulation signals is supported by electro-thermal device simulations, taking into account sample preparation effects.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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