{"title":"微机电系统(MEMS):电路中的技术和未来应用","authors":"Chang Liu","doi":"10.1109/ICSICT.1998.786526","DOIUrl":null,"url":null,"abstract":"MEMS technology can enable new circuit components. Current examples include RF signal switches, tunable capacitors and inductors, resonant filters, antennas, and relays. These components, all involving micromechanical principles, can provide enhanced performances and reconfigurability, reduced component sizes, and potentially simplified system-level design. I will discuss our DARPA-funded efforts in developing electromechanical RF switches, high-gain antennas, and new types of planar waveguides. Thermal-mechanical RF switches exhibit low on-state insertion loss and high off-state isolation compared with conventional transistor-based counterparts, while operating under IC-compatible bias conditions.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Micro electromechanical systems (MEMS): technology and future applications in circuits\",\"authors\":\"Chang Liu\",\"doi\":\"10.1109/ICSICT.1998.786526\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"MEMS technology can enable new circuit components. Current examples include RF signal switches, tunable capacitors and inductors, resonant filters, antennas, and relays. These components, all involving micromechanical principles, can provide enhanced performances and reconfigurability, reduced component sizes, and potentially simplified system-level design. I will discuss our DARPA-funded efforts in developing electromechanical RF switches, high-gain antennas, and new types of planar waveguides. Thermal-mechanical RF switches exhibit low on-state insertion loss and high off-state isolation compared with conventional transistor-based counterparts, while operating under IC-compatible bias conditions.\",\"PeriodicalId\":286980,\"journal\":{\"name\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"volume\":\"72 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1998.786526\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.786526","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Micro electromechanical systems (MEMS): technology and future applications in circuits
MEMS technology can enable new circuit components. Current examples include RF signal switches, tunable capacitors and inductors, resonant filters, antennas, and relays. These components, all involving micromechanical principles, can provide enhanced performances and reconfigurability, reduced component sizes, and potentially simplified system-level design. I will discuss our DARPA-funded efforts in developing electromechanical RF switches, high-gain antennas, and new types of planar waveguides. Thermal-mechanical RF switches exhibit low on-state insertion loss and high off-state isolation compared with conventional transistor-based counterparts, while operating under IC-compatible bias conditions.