亚纳米集成电路设计中的DFM现实

N. Verghese, P. Hurat
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引用次数: 4

摘要

需要清楚地了解亚纳米(低于90nm)效应对IC设计的影响,以确保(1)在设计过程中考虑到制造变化,以避免灾难性失效;(2)在硅上实际实现设计中模拟的预期性能,以避免参数失效。本文讨论了制造解决方案的设计,使设计人员能够在设计期间预测系统的制造变化,以检测和修复灾难性和参数性故障。本文给出了设计对亚纳米制造变化的敏感性的真实例子,以及在制造前使用适当的EDA解决方案正确分析、优化和验证设计的必要性,这些解决方案会在设计流程中带来制造变化的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
DFM reality in sub-nanometer IC design
The impact of sub-nanometer (below 90nm) effects on IC designs needs to be clearly understood to ensure that (1) manufacturing variations are considered during design to avoid catastrophic failures, and (2) the expected performance simulated in design is actually realized on silicon to avoid parametric failures. This paper discusses design for manufacturing solutions that enable designers to predict systematic manufacturing variations during design to detect and repair catastrophic and parametric failures. This paper presents real examples of design sensitivities to sub-nanometer manufacturing variations and the need to correctly analyze, optimize and verify the design before manufacturing by using appropriate EDA solutions which bring the effects of manufacturing variations in the design flow.
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