基于复合透明栅InAlAs/InGaAs变质HEMT的光电混频器

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2010-07-23 DOI:10.1109/ICIPRM.2010.5516402

Che-Kai Lin, Chao-Wei Lin, Yi-chun Wu, H. Chiu

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引用次数: 0

摘要

在这项工作中，我们在GaAs衬底上使用溅射ITO/Au/ITO复合薄膜InAlAs/InGaAs变质HEMT (CTG-MHEMT)制备了第一个透明栅极。作为光电混频器，CTG-MHEMT已被证明可以提高前端光耦合效率。通过优化偏置条件，可以提高光电混合效率。通过研究CTG-MHEMT的内部光伏增益(Gpv)和光电导增益(Gpc)，阐明了CTG-MHEMT的光探测机理。为了比较其光学特性，制作了透明栅极MHEMT (TG-MHEMT)。CTG-MHEMT作为光电子混频器在光纤微波传输系统中具有简化基站结构的潜力。

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An optoelectronic mixer based on composite transparent gate InAlAs/InGaAs metamorphic HEMT

In this work, we have fabricated the first transparent gate using sputtered ITO/Au/ITO composite films InAlAs/InGaAs metamorphic HEMT (CTG-MHEMT) on GaAs substrate. The CTG-MHEMT has been demonstrated to increase front side optical coupling efficiency as an optoelectronic mixer. By optimizing the bias condition, the optoelectronic mixing efficiency can be enhanced. The photodetection mechanism of CTG-MHEMT is clarified by investigating the internal photovoltaic gain (Gpv) and photoconductance gain (Gpc). For comparison of the optical characteristics, the transparent gate MHEMT (TG-MHEMT) has been fabricated. The CTG-MHEMT as an optoelectronic mixer is a promising candidate that can simplify the base station architecture in fiber-optic microwave transmission systems.

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来源期刊

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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