{"title":"一种新型垂直梳状驱动的CMOS-MEMS扫描微镜","authors":"Peng Qu, H. Qu","doi":"10.1109/OMEMS.2012.6318803","DOIUrl":null,"url":null,"abstract":"This paper presents design and simulation of an improved CMOS-MEMS electrostatic torsional micro-mirror for rotational scanning. The inclusion of substrate single crystal silicon (SCS) in vertical comb drives (VCDs) allows for large electrostatic force and scanning angle. The uniqueness of the VCDs also includes elevation tenability of the electrodes. The device design and simulation for improvements are based on AMI 0.5 μm CMOS technology with which the previous devices were fabricated. With typical technological parameters included in simulation, a maximum scanning angle of ±10° can be obtained at a 27 V driving voltage.","PeriodicalId":347863,"journal":{"name":"2012 International Conference on Optical MEMS and Nanophotonics","volume":"87 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A novel CMOS-MEMS scanning micro-mirror using vertical comb drives\",\"authors\":\"Peng Qu, H. Qu\",\"doi\":\"10.1109/OMEMS.2012.6318803\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents design and simulation of an improved CMOS-MEMS electrostatic torsional micro-mirror for rotational scanning. The inclusion of substrate single crystal silicon (SCS) in vertical comb drives (VCDs) allows for large electrostatic force and scanning angle. The uniqueness of the VCDs also includes elevation tenability of the electrodes. The device design and simulation for improvements are based on AMI 0.5 μm CMOS technology with which the previous devices were fabricated. With typical technological parameters included in simulation, a maximum scanning angle of ±10° can be obtained at a 27 V driving voltage.\",\"PeriodicalId\":347863,\"journal\":{\"name\":\"2012 International Conference on Optical MEMS and Nanophotonics\",\"volume\":\"87 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Conference on Optical MEMS and Nanophotonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMEMS.2012.6318803\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Optical MEMS and Nanophotonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEMS.2012.6318803","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel CMOS-MEMS scanning micro-mirror using vertical comb drives
This paper presents design and simulation of an improved CMOS-MEMS electrostatic torsional micro-mirror for rotational scanning. The inclusion of substrate single crystal silicon (SCS) in vertical comb drives (VCDs) allows for large electrostatic force and scanning angle. The uniqueness of the VCDs also includes elevation tenability of the electrodes. The device design and simulation for improvements are based on AMI 0.5 μm CMOS technology with which the previous devices were fabricated. With typical technological parameters included in simulation, a maximum scanning angle of ±10° can be obtained at a 27 V driving voltage.
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