SiC功率器件和工艺技术的进展和未来挑战

2017 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2017-12-01 DOI:10.1109/IEDM.2017.8268360

T. Kimoto, H. Niwa, N. Kaji, T. Kobayashi, Y. Zhao, S. Mori, M. Aketa

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引用次数: 15

摘要

综述了作者小组在SiC器件物理学和功率器件方面的最新进展。确定了较宽温度范围内的冲击电离系数，实现了器件的精确模拟。13kv SiC引脚二极管具有1.4极低的差分导通电阻mΩ。介绍了cm2和11kv SiC外延MPS二极管。讨论了SiC mosfet中的迁移率限制因素，并演示了3kv反向阻断mosfet。

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Progress and future challenges of SiC power devices and process technology

Recent progress in SiC device physics and development of power devices in the authors' group is reviewed. The impact ionization coefficients in the wide temperature range were determined, which enables accurate device simulation. 13 kV SiC pin diodes with a very low differential on-resistance of 1.4 mΩ.cm2 and 11 kV SiC epitaxial MPS diodes are presented. A mobility-limiting factor in SiC MOSFETs is discussed, and 3 kV reverse-blocking MOSFETs are demonstrated.

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2017 IEEE International Electron Devices Meeting (IEDM)

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