V. Jain, E. Lobisser, A. Baraskar, B. Thibeault, M. Rodwell, Z. Griffith, M. Urteaga, S. Bartsch, D. Loubychev, A. Snyder, Y. Wu, J. Fastenau, W.K. Liu
{"title":"干蚀刻原位难熔发射极触点技术中的高性能110nm InGaAs/InP dhbt","authors":"V. Jain, E. Lobisser, A. Baraskar, B. Thibeault, M. Rodwell, Z. Griffith, M. Urteaga, S. Bartsch, D. Loubychev, A. Snyder, Y. Wu, J. Fastenau, W.K. Liu","doi":"10.1109/DRC.2010.5551887","DOIUrl":null,"url":null,"abstract":"We report a 110 nm InP/In<inf>0.53</inf>Ga<inf>0.47</inf>As/InP double heterojunction bipolar transistor (DHBT) demonstrating a simultaneous f<inf>t</inf>/f<inf>max</inf> of 465/660 GHz and operating at power densities in excess of 50 mW/µm<sup>2</sup>. To our knowledge this is the smallest junction width reported for a III–V DHBT. The narrow 110 nm emitter junction permits the devices to be biased simultaneously at high voltages and high current densities (J<inf>e</inf>) with peak RF performance at 41 mW/µm<sup>2</sup> (J<inf>e</inf> = 23.6 mA/µm<sup>2</sup>, V<inf>ce</inf> = 1.75 V). Devices incorporate low contact resistance, refractory, in-situ Mo emitter contact to a highly doped, regrown InGaAs cap. A low stress, sputter deposited, refractory, dry-etched W/Ti<inf>0.1</inf>W<inf>0.9</inf> emitter metal process was developed demonstrating both high emitter yield and scalability to sub-100 nm junctions. Previously reported dry etch processes involving Ti/Ti<inf>0.1</inf>W<inf>0.9</inf> metals could not be scaled below 180 nm junction widths due to high metal stress resulting in very low emitter yield [1, 2]. The emitter metal contacts reported here are 100 nm wide and the emitter-base junction width is 110 nm. On-wafer Through-Reflect-Line (TRL) calibration structures were used to measure the RF performance of devices from 140 – 180 GHz.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"High performance 110 nm InGaAs/InP DHBTs in dry-etched in-situ refractory emitter contact technology\",\"authors\":\"V. Jain, E. Lobisser, A. Baraskar, B. Thibeault, M. Rodwell, Z. Griffith, M. Urteaga, S. Bartsch, D. Loubychev, A. Snyder, Y. Wu, J. Fastenau, W.K. Liu\",\"doi\":\"10.1109/DRC.2010.5551887\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report a 110 nm InP/In<inf>0.53</inf>Ga<inf>0.47</inf>As/InP double heterojunction bipolar transistor (DHBT) demonstrating a simultaneous f<inf>t</inf>/f<inf>max</inf> of 465/660 GHz and operating at power densities in excess of 50 mW/µm<sup>2</sup>. To our knowledge this is the smallest junction width reported for a III–V DHBT. The narrow 110 nm emitter junction permits the devices to be biased simultaneously at high voltages and high current densities (J<inf>e</inf>) with peak RF performance at 41 mW/µm<sup>2</sup> (J<inf>e</inf> = 23.6 mA/µm<sup>2</sup>, V<inf>ce</inf> = 1.75 V). Devices incorporate low contact resistance, refractory, in-situ Mo emitter contact to a highly doped, regrown InGaAs cap. A low stress, sputter deposited, refractory, dry-etched W/Ti<inf>0.1</inf>W<inf>0.9</inf> emitter metal process was developed demonstrating both high emitter yield and scalability to sub-100 nm junctions. Previously reported dry etch processes involving Ti/Ti<inf>0.1</inf>W<inf>0.9</inf> metals could not be scaled below 180 nm junction widths due to high metal stress resulting in very low emitter yield [1, 2]. The emitter metal contacts reported here are 100 nm wide and the emitter-base junction width is 110 nm. On-wafer Through-Reflect-Line (TRL) calibration structures were used to measure the RF performance of devices from 140 – 180 GHz.\",\"PeriodicalId\":396875,\"journal\":{\"name\":\"68th Device Research Conference\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"68th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2010.5551887\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"68th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2010.5551887","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High performance 110 nm InGaAs/InP DHBTs in dry-etched in-situ refractory emitter contact technology
We report a 110 nm InP/In0.53Ga0.47As/InP double heterojunction bipolar transistor (DHBT) demonstrating a simultaneous ft/fmax of 465/660 GHz and operating at power densities in excess of 50 mW/µm2. To our knowledge this is the smallest junction width reported for a III–V DHBT. The narrow 110 nm emitter junction permits the devices to be biased simultaneously at high voltages and high current densities (Je) with peak RF performance at 41 mW/µm2 (Je = 23.6 mA/µm2, Vce = 1.75 V). Devices incorporate low contact resistance, refractory, in-situ Mo emitter contact to a highly doped, regrown InGaAs cap. A low stress, sputter deposited, refractory, dry-etched W/Ti0.1W0.9 emitter metal process was developed demonstrating both high emitter yield and scalability to sub-100 nm junctions. Previously reported dry etch processes involving Ti/Ti0.1W0.9 metals could not be scaled below 180 nm junction widths due to high metal stress resulting in very low emitter yield [1, 2]. The emitter metal contacts reported here are 100 nm wide and the emitter-base junction width is 110 nm. On-wafer Through-Reflect-Line (TRL) calibration structures were used to measure the RF performance of devices from 140 – 180 GHz.