沟栅igbt的TCAD仿真，用于预测未来缩放器件的载波寿命要求

2021 IEEE 14th International Conference on ASIC (ASICON) Pub Date : 2021-10-26 DOI:10.1109/ASICON52560.2021.9620503

M. Watanabe

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引用次数: 0

摘要

采用技术CAD (TCAD)对硅沟槽栅绝缘栅双极晶体管进行了分析。3D-TCAD仿真得到的JC-VCE特性与实验结果吻合良好。通过从电势分布中提取n基层的导通电阻来确定缩放沟栅igbt的载流子寿命要求。

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TCAD simulation of trench-gate IGBTs for prediction of carrier lifetime requirements for future scaled devices

Silicon trench-gate insulated gate bipolar transistors (IGBTs) were analyzed using technology CAD (TCAD). Excellent agreement was confirmed between the JC-VCE characteristics obtained by 3D-TCAD simulations and experiments. The carrier lifetime requirement for scaled trench-gate IGBTs was determined by extraction of the on-resistance of the n-base layer derived from the electric potential profile.

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2021 IEEE 14th International Conference on ASIC (ASICON)

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