反转通道和耗尽通道SOS mosfet射频特性的比较

COMMAD 2012 Pub Date : 1900-01-01 DOI:10.1109/COMMAD.2012.6472369

K. Bertling, A. Rakić, Y. Yeow, C. J. O'brien, H. Domyo

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引用次数: 0

摘要

通过测量小信号等效电路参数，对传统反转通道和耗尽通道SOS MOSFET的射频性能进行了评估。结果表明，由于耗尽通道的电子迁移率，后者具有明显更高的截止频率fT。

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Comparison of the RF characteristics of inversion channel and depletion channel SOS MOSFETs

Measurement of small-signal equivalent circuit parameters was carried out to estimate the RF performance of conventional inversion channel and depletion channel SOS MOSFET's. It was shown that the latter has significantly higher cutoff frequency fT attributed to electron mobility of the depletion channel.

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COMMAD 2012

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