InGaP/GaAs/Ge太阳能电池上ZnO纳米管的水热生长

Chen-Chen Chung, K. Lin, H. Yu, Nguyen-Hong Quan, C. Dee, E. Chang
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引用次数: 0

摘要

将ZnO纳米管生长在三结(T-J)太阳能电池器件的增透层(AR)上,以提高光转换效率。与裸露的T-J太阳能电池(没有AR层)相比,Si3N4 AR涂层太阳能电池的性能有所提高。在AR层顶部生长一层ZnO纳米管的样品,在350 ~ 500 nm的光谱范围内,其光反射率较裸涂和单涂AR的T-J太阳能电池最低。与传统的T-J太阳能电池相比,ZnO纳米管的使用使转换效率提高了4.9%。而Si3N4 AR包覆样品仅提高了3.2%的转换效率。这一结果令人鼓舞,因为实验程序的进一步完善和变化可能会在未来带来更令人兴奋的表现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Hydrothermal growth of ZnO nanotubes on InGaP/GaAs/Ge solar cells
A new design where ZnO nanotubes were grown on the antireflection (AR) layer coated on triple-junction (T-J) solar cell devices to enhance the light conversion efficiency. Compared to the bare T-J solar cells (without an AR layer), the performance of Si3N4 AR coated solar cell showed improvement. The sample with a layer of ZnO nanotubes grown in top of AR layer showed the lowest light reflection compared with the bare and solely AR coated T-J solar cell especially in the spectrum range of 350-500 nm. The use of ZnO nanotubes have increased the conversion efficiency by 4.9% compared with the conventional T-J solar cell. While the Si3N4 AR coated sample only increased the conversion efficiency by 3.2%. This result is quite encouraging as further refinement and variation in the experiment procedures could possibly bring more exciting performance in the future.
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