一种新型垂直隧道场效应管，带对带隧道与栅极电场排列，平均SS为28 mV/ 10年

2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-01 DOI:10.23919/SNW.2017.8242291

Pao-Chuan Shih, Hsien-chih Huang, Chien-An Wang, Jiun-Yun Li

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引用次数: 2

摘要

我们提出了一种新型垂直隧道场效应管，其带对带隧穿与栅极电场对齐。仿真结果表明，由于对隧道结极好的栅极控制，驱动电流高，亚阈值摆幅极陡。通过源漏隧道的关闭状态泄漏被源漏层和漏层之间的间隔层大大抑制。此外，该器件完全兼容VLSI技术。

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A novel vertical tunnel FET of band-to-band tunneling aligned with gate electric field with averaged SS of 28 mV/decade

We propose a novel vertical tunnel FET of band-to-band tunneling aligned with the gate electric field. Simulation results show high drive current and extremely sharp subthreshold swing due to excellent gate control over the tunnel junction. OFF state leakage via source-to-drain tunneling is much suppressed by the spacer layer between the source and drain layers. Furthermore, this device is fully compatible to VLSI technology.

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来源期刊

2017 Silicon Nanoelectronics Workshop (SNW)

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