90nm达林顿对放大器分析

2016 International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT) Pub Date : 2016-03-03 DOI:10.1109/ICEEOT.2016.7755385

Rashmi Singh, R. Mehra

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引用次数: 6

摘要

在高数据速率的通信系统中，对晶体管的要求越来越高。晶体管用于许多需要使用极低频率获得高增益的应用中。在当今的通信系统中，放大器被广泛应用于低噪声放大器、宽带混频器、分布式放大器、功率放大器等领域。对放大器满足当今技术要求的所有参数，如高速传输效率，低功耗和较少的电路使用对放大器用于小信号放大器的高级版本，增加了偏置电阻，提高了电压增益和带宽的扩大。同时也消除了高频时对放频响差的问题。本文利用cadence软件对两级放大器电路进行了研究。本文通过在第一晶体管发射极端增加偏置电阻，可以提高对放的电压增益、电流增益、输出电流和输出电压。本文采用GPDK 90nm工艺。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis of darlington pair amplifier at 90nm technology

The demand of transistors is rising in today's communication system having high data rate. Transistors are used in many applications where high gain is needed by using very low frequency. In today's communication system amplifier is used in many applications such as low noise amplifier, broadband mixer, distributed amplifier, power amplifier etc. The pair amplifier satisfy all parameters which is required by today's technology such as-high speed transmission efficiency, less power consumption and less circuitrary to be used pair is used in advanced version of small signal amplifier with additional biasing resistance which improves voltage gain and widening of bandwidth. It also removes poor frequency response of pair amplifier at higher frequency. In this paper, cadence software is used to study the circuit of two-stage amplifier. In this paper after adding biasing resistance in emitter terminal of first transistor we can increase the voltage gain, current gain, output current and output voltage of pair amplifier. GPDK 90nm technology is used in this paper.

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来源期刊

2016 International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT)

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