在标准电池设计中获取电池的实时加热

A. Timár, M. Rencz
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引用次数: 3

摘要

在当今的数字电子集成电路中,器件发热是最关键的问题之一。过热会导致功能失效和设备故障。在某些情况下,ic过热会导致设备本身的物理破坏。本文介绍了一种在标准晶片集成电路表面上确定晶片和栅极加热曲线的方法。所提出的方法和工具集紧密集成到标准化的逻辑模拟器引擎中,从而在逻辑模拟期间为数字电路设计人员提供低级,单元分辨率的温度分布图。在整个逻辑仿真过程中,可以监测设计中每个组成单元的实际温度。通过能够在初始模拟期间监测数字电池的温度,它使我们能够在制造之前检测到热点和过热导致的故障。通过使用从该方法中获得的热点的空间位置和温度大小,可以驱动放置和路径(P&R)工具来改变电池的放置和路径,以避免加热导致的故障。此外,可以使用ic表面的模拟温度图开发冷却解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Acquiring real-time heating of cells in standard cell designs
In today's digital electronic integrated circuits device heating is one of the most critical issues. Overheating can cause failures in functionality and device malfunction. In certain circumstances overheating of ICs can cause physical destruction of the device itself. This paper introduces a solution to determine cell and gate heating curves across the standard cell ICs surface. The presented methodology and toolset is tightly integrated into standardized logic simulator engines thus providing digital circuit designers a low-level, cell-resolution temperature distribution map during logic simulations. Actual temperatures of each con- sisting cell of the design can be monitored throughout the whole logic simulation. By being able to monitor temperatures of digital cells during initial simulations, it allows us to detect hot-spots and overheating caused malfunctions far before manufacture. By using the spatial location and temperature magnitude of hot-spots acquired from the presented methodology, place and route (P&R) tools can be driven to change cell placement and routing in order to avoid heating caused failures. Additionally, cooling solutions can be developed using the simulated temperature maps of the ICs surface.
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