H. Jung, T. Park, Jeong Hwan Kim, Sang Young Lee, Joohwi Lee, Himchan Oh, Kwang Duck Na, Jung-min Park, Weon-hong Kim, Min-woo Song, N. Lee, C. Hwang
{"title":"系统研究了各种高k栅极介质的偏置温度不稳定性HfO2, HfZrxOy和ZrO2","authors":"H. Jung, T. Park, Jeong Hwan Kim, Sang Young Lee, Joohwi Lee, Himchan Oh, Kwang Duck Na, Jung-min Park, Weon-hong Kim, Min-woo Song, N. Lee, C. Hwang","doi":"10.1109/IRPS.2009.5173392","DOIUrl":null,"url":null,"abstract":"HfO<inf>2</inf>, HfZr<inf>x</inf>O<inf>y</inf> and ZrO<inf>2</inf> gate dielectrics are systematically compared in terms of the nMOS PBTI and pMOS NBTI. Compared to HfO<inf>2</inf>, ZrO<inf>2</inf> exhibits higher capacitance and superior nMOS mobility characteristics. In addition, as the ZrO<inf>2</inf> content increases, V<inf>th</inf> shift under the nMOS PBTI stress is dramatically reduced. This is mainly contributed to the lower density of pre-existing bulk traps related to the oxygen vacancies.","PeriodicalId":345860,"journal":{"name":"2009 IEEE International Reliability Physics Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2\",\"authors\":\"H. Jung, T. Park, Jeong Hwan Kim, Sang Young Lee, Joohwi Lee, Himchan Oh, Kwang Duck Na, Jung-min Park, Weon-hong Kim, Min-woo Song, N. Lee, C. Hwang\",\"doi\":\"10.1109/IRPS.2009.5173392\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"HfO<inf>2</inf>, HfZr<inf>x</inf>O<inf>y</inf> and ZrO<inf>2</inf> gate dielectrics are systematically compared in terms of the nMOS PBTI and pMOS NBTI. Compared to HfO<inf>2</inf>, ZrO<inf>2</inf> exhibits higher capacitance and superior nMOS mobility characteristics. In addition, as the ZrO<inf>2</inf> content increases, V<inf>th</inf> shift under the nMOS PBTI stress is dramatically reduced. This is mainly contributed to the lower density of pre-existing bulk traps related to the oxygen vacancies.\",\"PeriodicalId\":345860,\"journal\":{\"name\":\"2009 IEEE International Reliability Physics Symposium\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-04-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2009.5173392\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2009.5173392","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2
HfO2, HfZrxOy and ZrO2 gate dielectrics are systematically compared in terms of the nMOS PBTI and pMOS NBTI. Compared to HfO2, ZrO2 exhibits higher capacitance and superior nMOS mobility characteristics. In addition, as the ZrO2 content increases, Vth shift under the nMOS PBTI stress is dramatically reduced. This is mainly contributed to the lower density of pre-existing bulk traps related to the oxygen vacancies.
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