100nm范围的压电PZT薄膜:嵌入在低压器件中的执行器的解决方案

E. Defay, G. Le Rhun, F. Perruchot, P. Rey, A. Suhm, M. Aid, L.J. Liu, S. Pacheco, M. Miller
{"title":"100nm范围的压电PZT薄膜:嵌入在低压器件中的执行器的解决方案","authors":"E. Defay, G. Le Rhun, F. Perruchot, P. Rey, A. Suhm, M. Aid, L.J. Liu, S. Pacheco, M. Miller","doi":"10.1109/MEMSYS.2009.4805458","DOIUrl":null,"url":null,"abstract":"This paper reports the piezoelectric properties of sputtered and sol gel PZT thin films investigated in a low thickness range (100-250nm). Piezoelectric-elastic bimorphs including very thin PZT films were realized and the maximum reachable deflection at 5V was characterized. The depoling effect experienced by the PZT versus the maximum post process temperature is also discussed which leads to the motivation of developing low thickness range PZT thin films. Elastic-piezoelectric bimorphs were realized and exhibited deflection higher than 5¿m at 5V. Moreover, these bimorphs showed only a 10% decrease of the deflection after 5 billions cycles.","PeriodicalId":187850,"journal":{"name":"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Piezoelectric PZT Thin Films in the 100nm Range: A Solution for Actuators Embedded in Low Voltage Devices\",\"authors\":\"E. Defay, G. Le Rhun, F. Perruchot, P. Rey, A. Suhm, M. Aid, L.J. Liu, S. Pacheco, M. Miller\",\"doi\":\"10.1109/MEMSYS.2009.4805458\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports the piezoelectric properties of sputtered and sol gel PZT thin films investigated in a low thickness range (100-250nm). Piezoelectric-elastic bimorphs including very thin PZT films were realized and the maximum reachable deflection at 5V was characterized. The depoling effect experienced by the PZT versus the maximum post process temperature is also discussed which leads to the motivation of developing low thickness range PZT thin films. Elastic-piezoelectric bimorphs were realized and exhibited deflection higher than 5¿m at 5V. Moreover, these bimorphs showed only a 10% decrease of the deflection after 5 billions cycles.\",\"PeriodicalId\":187850,\"journal\":{\"name\":\"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.2009.4805458\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2009.4805458","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

摘要

本文报道了低厚度范围(100-250nm)溅射和溶胶凝胶PZT薄膜的压电性能。实现了包括极薄PZT薄膜在内的压电弹性双晶,并表征了5V下的最大可达挠度。本文还讨论了PZT在最大制程温度下的脱极效应,从而得出了开发低厚度PZT薄膜的动机。实现了弹性压电双晶,并在5V下表现出大于5¿m的挠度。此外,经过50亿次循环后,这些双晶的偏转只减少了10%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Piezoelectric PZT Thin Films in the 100nm Range: A Solution for Actuators Embedded in Low Voltage Devices
This paper reports the piezoelectric properties of sputtered and sol gel PZT thin films investigated in a low thickness range (100-250nm). Piezoelectric-elastic bimorphs including very thin PZT films were realized and the maximum reachable deflection at 5V was characterized. The depoling effect experienced by the PZT versus the maximum post process temperature is also discussed which leads to the motivation of developing low thickness range PZT thin films. Elastic-piezoelectric bimorphs were realized and exhibited deflection higher than 5¿m at 5V. Moreover, these bimorphs showed only a 10% decrease of the deflection after 5 billions cycles.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信