数字CMOS VLSI电路中温度传感器的分析与设计

Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Pub Date : 2006-06-22 DOI:10.1109/MIXDES.2006.1706612

A. Golda, A. Kos

{"title":"数字CMOS VLSI电路中温度传感器的分析与设计","authors":"A. Golda, A. Kos","doi":"10.1109/MIXDES.2006.1706612","DOIUrl":null,"url":null,"abstract":"The paper presents theoretical analyses, simulations and design of a PTAT (proportional to absolute temperature) temperature sensor that is based on the vertical PNP structure and dedicated to CMOS VLSI circuits. Performed considerations take into account specific properties of materials that forms electronic elements. The electrothermal simulations are performed in order to verify the unwanted self-heating effect of the sensor","PeriodicalId":318768,"journal":{"name":"Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Analysis And Design Of Ptat Temperature Sensor In Digital CMOS VLSI Circuits\",\"authors\":\"A. Golda, A. Kos\",\"doi\":\"10.1109/MIXDES.2006.1706612\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents theoretical analyses, simulations and design of a PTAT (proportional to absolute temperature) temperature sensor that is based on the vertical PNP structure and dedicated to CMOS VLSI circuits. Performed considerations take into account specific properties of materials that forms electronic elements. The electrothermal simulations are performed in order to verify the unwanted self-heating effect of the sensor\",\"PeriodicalId\":318768,\"journal\":{\"name\":\"Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIXDES.2006.1706612\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIXDES.2006.1706612","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 16

摘要

本文介绍了一种基于垂直PNP结构、专用于CMOS VLSI电路的PTAT (proportional to absolute temperature)温度传感器的理论分析、仿真和设计。执行的考虑考虑到形成电子元件的材料的特定属性。为了验证传感器的自热效应，进行了电热模拟

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Analysis And Design Of Ptat Temperature Sensor In Digital CMOS VLSI Circuits

The paper presents theoretical analyses, simulations and design of a PTAT (proportional to absolute temperature) temperature sensor that is based on the vertical PNP structure and dedicated to CMOS VLSI circuits. Performed considerations take into account specific properties of materials that forms electronic elements. The electrothermal simulations are performed in order to verify the unwanted self-heating effect of the sensor

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Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.

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