C. Morrison, M. Myronov, J. Foronda, C. Casteleiro, J. Halpin, S. Rhead, D. Leadley
{"title":"应变锗量子阱中高迁移率二维空穴气体的量子输运","authors":"C. Morrison, M. Myronov, J. Foronda, C. Casteleiro, J. Halpin, S. Rhead, D. Leadley","doi":"10.1109/ISTDM.2014.6874636","DOIUrl":null,"url":null,"abstract":"A high mobility (780,000 cm2/Vs) 2DHG has been created in a strained Ge quantum well structure, through B modulation doping. The mobility and carrier density were measured through Hall effect measurements at temperatures between 0.3 K and 300 K, revealing a low temperature carrier density of 2×1011cm-2. Low temperature magnetoresistance measurements show a complex, multiple frequency oscillatory behavior in the SdH oscillations for this modulation doped quantum well. This may be attributed to oscillations from carriers in other layers in the heterostructure superimposed on the oscillations due to transport in the quantum well, due to parallel conduction.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well\",\"authors\":\"C. Morrison, M. Myronov, J. Foronda, C. Casteleiro, J. Halpin, S. Rhead, D. Leadley\",\"doi\":\"10.1109/ISTDM.2014.6874636\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high mobility (780,000 cm2/Vs) 2DHG has been created in a strained Ge quantum well structure, through B modulation doping. The mobility and carrier density were measured through Hall effect measurements at temperatures between 0.3 K and 300 K, revealing a low temperature carrier density of 2×1011cm-2. Low temperature magnetoresistance measurements show a complex, multiple frequency oscillatory behavior in the SdH oscillations for this modulation doped quantum well. This may be attributed to oscillations from carriers in other layers in the heterostructure superimposed on the oscillations due to transport in the quantum well, due to parallel conduction.\",\"PeriodicalId\":371483,\"journal\":{\"name\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISTDM.2014.6874636\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874636","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
通过B调制掺杂，在应变Ge量子阱结构中产生了高迁移率(780,000 cm2/Vs)的2DHG。在0.3 K ~ 300 K的温度范围内，通过霍尔效应测量了载流子密度和迁移率，得到了低温载流子密度2×1011cm-2。低温磁阻测量表明，该调制掺杂量子阱的SdH振荡具有复杂的多频振荡行为。这可能归因于异质结构中其他层的载流子的振荡，这些载流子叠加在量子阱中由平行传导引起的输运振荡上。
Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well
A high mobility (780,000 cm2/Vs) 2DHG has been created in a strained Ge quantum well structure, through B modulation doping. The mobility and carrier density were measured through Hall effect measurements at temperatures between 0.3 K and 300 K, revealing a low temperature carrier density of 2×1011cm-2. Low temperature magnetoresistance measurements show a complex, multiple frequency oscillatory behavior in the SdH oscillations for this modulation doped quantum well. This may be attributed to oscillations from carriers in other layers in the heterostructure superimposed on the oscillations due to transport in the quantum well, due to parallel conduction.
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