纳米楔形阻性开关存储器的制备及其开关特性分析

2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-01 DOI:10.23919/SNW.2017.8242294

Dong Keun Lee, Sungjun Kim, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Byung-Gook Park

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引用次数: 0

摘要

通过修改底电极结构，制备了纳米楔形结构的阻性开关存储器，并分析了器件的直流特性。通过在低阻和高阻状态(LRS和HRS)下在高温下设置超过104秒的保留测试，证明了出色的数据存储能力。并进行了耐久性试验，以证明该电阻式开关存储器件的优异特性。

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Fabrication of nano-wedge resistive switching memory and analysis on its switching characteristics

Nano-wedge structured resistive switching memory is fabricated through modifying bottom electrode structure and the DC characteristics of devices are analyzed. Excellent data storage capability is proved through retention test by setting at high temperature over 104 seconds in both low and high resistance states (LRS and HRS). Endurance test is also performed to demonstrate outstanding characteristics of the resistive switching memory device.

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2017 Silicon Nanoelectronics Workshop (SNW)

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