采用先进的布局理念提升功率SiGe hbt的性能

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398186

Guogong Wang, Chao Qin, N. Jiang, Z. Ma

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引用次数: 9

摘要

我们报道了一种先进的功率器件布局结构，即传热平衡(HTCB)布局，用于设计功率SiGe hts。结果表明，这种新的功率器件结构可以在不使用镇流器的情况下大大降低功率器件的不良热效应。采用新布局概念的SiGe功率hbt显著提高了功率性能。

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Boosting up performance of power SiGe HBTs using advanced layout concept

We report an advanced power device layout structure, namely heat transfer counterbalanced (HTCB) layout, for designing power SiGe HBTs. It is shown that this new power device structure can substantially reduce adverse thermal effects of power devices without using ballasting resistors. Significantly improved power performances have been achieved from SiGe power HBTs employing the new layout concept.

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Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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