一种新的用于模拟/数字电路仿真的深亚微米FD SOI mosfet物理I-V模型

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785915

X. Xi, Hongmei Wang, Xing Zhang, Yangyuan Wang

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引用次数: 0

摘要

建立了一种新的分析电流模型，该模型适用于沟道长度低至深亚微米的全耗尽SOI/MOSFET的强反转工作区域，在线性和饱和区域只有一个单一的表达式，而不使用平滑函数。该算法在电路仿真器中的收敛性得到了改善。在不同几何形状的装置上进行的测量结果与模型预测结果吻合良好。

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A new physical I-V model of deep-submicron FD SOI MOSFETs for analogue/digital circuit simulation

A new analytical current model in the strong inversion operation region for fully depleted SOI/MOSFET with channel lengths down to deep submicrometer range is developed with only one single expression for both linear and saturation region without using a smoothing function. The convergence when employed in circuit simulators is improved. Measurements on devices of varied geometry show good agreement with model predictions.

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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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