具有高击穿电压的双凹槽AlInAs/GaInAs/InP hemt

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-12-31 DOI:10.1109/GAAS.1995.528971

K. Hur, R. A. McTaggart, B.W. LeBlanc, W. Hoke, P. Lemonias, A. B. Miller, T. Kazior, L. Aucoin

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引用次数: 15

摘要

双凹槽t栅极工艺已被成功地用于提高双脉冲掺杂AlInAs/GaInAs/InP hemt的栅极-漏极击穿电压。通过改变横向通道尺寸，击穿电压范围为11-19 V，最大通道电流范围为450-600 mA/mm。这种高击穿电压和高通道电流的结合表明，双凹槽工艺是一种有前途的高功率应用方法。

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Double recessed AlInAs/GaInAs/InP HEMTs with high breakdown voltages

A double recessed T-gate process has been successfully utilized to increase gate-to-drain breakdown voltages of double pulse doped AlInAs/GaInAs/InP HEMTs. By varying lateral channel dimensions, breakdown voltages in the range 11-19 V can be tailored with maximum channel currents in the range 450-600 mA/mm. This combination of high breakdown voltages and high channel currents indicate that the double recess process is a promising approach for high power applications.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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