{"title":"基于故障注入的双极OxRRAM存储阵列可靠性评估","authors":"H. Aziza, M. Bocquet, J. Portal, C. Muller","doi":"10.1109/IDT.2011.6123106","DOIUrl":null,"url":null,"abstract":"In this paper, a fault injection and simulation approach is used to study effects of resistive and capacitive defects on the faulty behavior of Oxide-based Resistive Memory RAM devices (OxRRAM). During the memory operations, logical and electrical characteristics of each memory cell of an elementary array are evaluated by using a bipolar OxRRAM compact model calibrated on actual devices. Simulation results are analyzed in terms of OxRRAM electrical characteristic variations to evaluate the robustness of the memory array against injected defects, inherent to the routing circuitry.","PeriodicalId":167786,"journal":{"name":"2011 IEEE 6th International Design and Test Workshop (IDT)","volume":"545 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"Bipolar OxRRAM memory array reliability evaluation based on fault injection\",\"authors\":\"H. Aziza, M. Bocquet, J. Portal, C. Muller\",\"doi\":\"10.1109/IDT.2011.6123106\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a fault injection and simulation approach is used to study effects of resistive and capacitive defects on the faulty behavior of Oxide-based Resistive Memory RAM devices (OxRRAM). During the memory operations, logical and electrical characteristics of each memory cell of an elementary array are evaluated by using a bipolar OxRRAM compact model calibrated on actual devices. Simulation results are analyzed in terms of OxRRAM electrical characteristic variations to evaluate the robustness of the memory array against injected defects, inherent to the routing circuitry.\",\"PeriodicalId\":167786,\"journal\":{\"name\":\"2011 IEEE 6th International Design and Test Workshop (IDT)\",\"volume\":\"545 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE 6th International Design and Test Workshop (IDT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IDT.2011.6123106\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE 6th International Design and Test Workshop (IDT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IDT.2011.6123106","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Bipolar OxRRAM memory array reliability evaluation based on fault injection
In this paper, a fault injection and simulation approach is used to study effects of resistive and capacitive defects on the faulty behavior of Oxide-based Resistive Memory RAM devices (OxRRAM). During the memory operations, logical and electrical characteristics of each memory cell of an elementary array are evaluated by using a bipolar OxRRAM compact model calibrated on actual devices. Simulation results are analyzed in terms of OxRRAM electrical characteristic variations to evaluate the robustness of the memory array against injected defects, inherent to the routing circuitry.
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