用于混合DRAM/PCM主存储系统的能量和性能敏感的DRAM缓存体系结构

H. Lee, Seungcheol Baek, C. Nicopoulos, Jongman Kim
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引用次数: 50

摘要

过去几年见证了一种有前途的新存储技术的出现。相变存储器(PCM)越来越被视为未来微处理器架构中存储子系统的一个有吸引力的替代方案,主要是因为其固有的深度扩展到纳米级的能力,以及它的低功耗。然而,PCM的写入性能是它的致命弱点,特别是与流行的DRAM技术相比。为了获得更高的整体系统性能,需要部署融合DRAM和PCM的混合解决方案。在本文中,我们着手探索各种DRAM/PCM混合配置如何影响系统性能和能耗,然后继续介绍一种新的架构,在不影响功率效率的情况下最大化性能。与传统混合结构相比,该结构的能量延迟积平均提高了42.2%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An energy- and performance-aware DRAM cache architecture for hybrid DRAM/PCM main memory systems
The last few years have witnessed the emergence of a promising new memory technology. Phase-Change Memory (PCM) is increasingly viewed as an attractive alternative for the memory sub-system of future microprocessor architectures, mainly because of its inherent ability to scale deeply into the nanoscale regime, and its low power consumption. However, PCM's write performance is its Achilles' heel, especially when compared to the prevalent DRAM technology. This weakness necessitates the deployment of hybridized solutions that fuse DRAM and PCM, in order to attain high overall system performance. In this paper, we set out to explore how various DRAM/PCM hybrid configurations affect system performance and energy consumption, and then proceed with the presentation of a novel architecture that maximizes performance without adversely affecting power efficiency. An energy-delay product improvement of 42.2%, on average, over conventional hybrid structures, is demonstrated.
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