使用标称和亚阈值供电电压I/sub DDQ/筛选vdsm异常值

International Test Conference, 2003. Proceedings. ITC 2003. Pub Date : 2003-09-30 DOI:10.1109/TEST.2003.1270883

C. Schuermyer, B. Benware, Kevin Cota, R. Madge, W. R. Daasch, L. Ning

{"title":"使用标称和亚阈值供电电压I/sub DDQ/筛选vdsm异常值","authors":"C. Schuermyer, B. Benware, Kevin Cota, R. Madge, W. R. Daasch, L. Ning","doi":"10.1109/TEST.2003.1270883","DOIUrl":null,"url":null,"abstract":"Very Deep Sub-Micron (VDSM) defects are resolved as Statistical Post-Processing™ (SPP) outliers of a new IDDQ screen. The screen applies an IDDQ pattern once to the Device Under Test (DUT) and takes two quiescent current measurements. The quiescent current measurements are taken at nominal and at subthreshold supply voltages. The scr een is demonstrated with 0.18µm and 0.13µm volume data. The screen's effectiveness is compared to stuck -at and other IDDQ screens.","PeriodicalId":236182,"journal":{"name":"International Test Conference, 2003. Proceedings. ITC 2003.","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Screening vdsm outliers using nominal and subthreshold supply voltage I/sub DDQ/\",\"authors\":\"C. Schuermyer, B. Benware, Kevin Cota, R. Madge, W. R. Daasch, L. Ning\",\"doi\":\"10.1109/TEST.2003.1270883\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Very Deep Sub-Micron (VDSM) defects are resolved as Statistical Post-Processing™ (SPP) outliers of a new IDDQ screen. The screen applies an IDDQ pattern once to the Device Under Test (DUT) and takes two quiescent current measurements. The quiescent current measurements are taken at nominal and at subthreshold supply voltages. The scr een is demonstrated with 0.18µm and 0.13µm volume data. The screen's effectiveness is compared to stuck -at and other IDDQ screens.\",\"PeriodicalId\":236182,\"journal\":{\"name\":\"International Test Conference, 2003. Proceedings. ITC 2003.\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Test Conference, 2003. Proceedings. ITC 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TEST.2003.1270883\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Test Conference, 2003. Proceedings. ITC 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TEST.2003.1270883","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 13

摘要

极深亚微米(VDSM)缺陷被解决为新的IDDQ屏幕的统计后处理™(SPP)异常值。屏幕对被测设备(DUT)应用一次IDDQ模式，并进行两次静态电流测量。静态电流测量在标称电压和亚阈值电压下进行。该屏幕显示了0.18µm和0.13µm的体积数据。该屏幕的有效性与卡在和其他IDDQ屏幕进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Screening vdsm outliers using nominal and subthreshold supply voltage I/sub DDQ/

Very Deep Sub-Micron (VDSM) defects are resolved as Statistical Post-Processing™ (SPP) outliers of a new IDDQ screen. The screen applies an IDDQ pattern once to the Device Under Test (DUT) and takes two quiescent current measurements. The quiescent current measurements are taken at nominal and at subthreshold supply voltages. The scr een is demonstrated with 0.18µm and 0.13µm volume data. The screen's effectiveness is compared to stuck -at and other IDDQ screens.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

International Test Conference, 2003. Proceedings. ITC 2003.

自引率

0.00%

发文量