3D硅堆叠互连(SSI)技术中的高带宽低功耗中间体互连挑战、设计和验证

Anna Wong, Gordon Tsui, Boon-Kai Soo, Chong-Ling Khoo, Yong Wang
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引用次数: 3

摘要

本文介绍了三维硅堆叠互连(SSI)技术中中间层互连与传统硅互连的特点。它探讨了独特的近端串扰(NEXT)和远端串扰(ext)行为的简单中介互连结构与仿真结果。研究了六种不同的路由结构对I/O密度和信号完整性的权衡,重点研究了串扰对时间的影响。分析表明,I/O密度较低的四种路由结构满足625MHz的定时要求,而其余两种I/O密度较高的路由结构则失败。在SSI技术测试芯片上实现了最佳折衷的路由结构。实验数据表明,在625MHz目标工作频率下,同步开关噪声(SSN)对时序的影响小于时序预算的20%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High bandwidth low power interposer interconnect challenge, design, and validation in 3D silicon stacked interconnect (SSI) technology
This paper describes the characteristics of interposer interconnects in 3D silicon stacked interconnect (SSI) technology in comparison to traditional silicon interconnects. It explores unique near end crosstalk (NEXT) and far end crosstalk (FEXT) behavior of simple interposer interconnect structure with simulation results. Six different routing structures were investigated for I/O density and signal integrity trade-off with emphasis in timing impact due to crosstalk. Analysis shows that the four routing structures with lower I/O density meet timing requirement set for 625MHz, whereas the remaining two routing structures with higher I/O density fail. The routing structure that demonstrates the best trade-off was implemented in a SSI technology test chip. Lab data shows that the timing impact from simultaneous switching noise (SSN) is less than 20% of timing budget at 625MHz targeted operating frequency.
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