1.8 GHz CMOS压控振荡器，相位噪声降低

2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185) Pub Date : 2001-06-14 DOI:10.1109/VLSIC.2001.934213

P. Andreani, H. Sjoland

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引用次数: 11

摘要

提出了一种采用标准0.35 /spl mu/m CMOS工艺实现的2v, 6ma, 15%调谐范围，1.8 GHz压控振荡器。采用片内滤波器和片外低频电感，大大降低了压控振荡器的相位噪声。在载波3mhz偏移处测量的相位噪声在整个调谐范围内介于-141.5 dBc/Hz和-138.5 dBc/Hz之间。

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A 1.8 GHz CMOS VCO with reduced phase noise

A 2 V, 6 mA, 15% tuning range, 1.8 GHz VCO implemented in a standard 0.35 /spl mu/m CMOS process is presented. The phase noise of the VCO has been greatly reduced by means of on-chip filters and one off-chip low frequency inductor. The phase noise measured at 3 MHz offset from the carrier is between -141.5 dBc/Hz and -138.5 dBc/Hz over the whole tuning range.

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2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)

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