22纳米互连光抗蚀剂去除和蚀刻后残留物去除的挑战和新方法

P. Mertens, T-G. Kim, M. Claes, Q. Le, G. Vereecke, E. Kesters, S. Suhard, A. Pacco, M. Lux, K. Kenis, A. Urbanowicz, Z. Tokei, G. Beyer
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引用次数: 4

摘要

描述了去除后金属硬掩膜蚀刻光抗蚀剂和后低k蚀刻残留物的关键挑战。综述了一些新的非等离子体技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Challenges and novel approaches for photo resist removal and post-etch residue removal for 22 nm interconnects
The critical challenges of removal of post metal hard mask etch photo resist removal and post low-k etch residue removal are described. An overview of some new non-plasma based approaches is presented.
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