{"title":"IGBT建模","authors":"V. Agarwal","doi":"10.1109/ICIT.2006.372207","DOIUrl":null,"url":null,"abstract":"A mathematical model has been developed for an insulated gate bipolar transistor (IGBT) by compartmenting it into two diodes which are connected in series with reverse configuration. One diode is an ordinary diode while other is a controlled diode. The performance of the controlled diode depends upon the magnitude of gate emitter, GE voltage and collector emitter (CE) voltage. A GE voltage Vg > Gate Emitter Threshold Voltage (VGET), modulates the conductivity of controlled diode together with hole injection from the p+ base near the collector terminal. Parameters of these diodes are estimated by applying curve fitting tool and power invariance method. The validity of the model has been checked by a simulation example. The results of simulation show appreciable closeness with actual one.","PeriodicalId":103105,"journal":{"name":"2006 IEEE International Conference on Industrial Technology","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modeling for IGBT\",\"authors\":\"V. Agarwal\",\"doi\":\"10.1109/ICIT.2006.372207\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A mathematical model has been developed for an insulated gate bipolar transistor (IGBT) by compartmenting it into two diodes which are connected in series with reverse configuration. One diode is an ordinary diode while other is a controlled diode. The performance of the controlled diode depends upon the magnitude of gate emitter, GE voltage and collector emitter (CE) voltage. A GE voltage Vg > Gate Emitter Threshold Voltage (VGET), modulates the conductivity of controlled diode together with hole injection from the p+ base near the collector terminal. Parameters of these diodes are estimated by applying curve fitting tool and power invariance method. The validity of the model has been checked by a simulation example. The results of simulation show appreciable closeness with actual one.\",\"PeriodicalId\":103105,\"journal\":{\"name\":\"2006 IEEE International Conference on Industrial Technology\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Conference on Industrial Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIT.2006.372207\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on Industrial Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIT.2006.372207","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
建立了绝缘栅双极晶体管(IGBT)的数学模型，将其划分为两个反向串联的二极管。一个二极管是普通二极管，而另一个是受控二极管。受控二极管的性能取决于栅极发射极、GE电压和集电极发射极(CE)电压的大小。GE电压Vg > Gate Emitter Threshold voltage (VGET)，通过集电极端子附近p+基极的空穴注入来调制受控二极管的电导率。利用曲线拟合工具和功率不变性法对二极管的参数进行了估计。通过仿真算例验证了该模型的有效性。仿真结果与实际结果接近。
A mathematical model has been developed for an insulated gate bipolar transistor (IGBT) by compartmenting it into two diodes which are connected in series with reverse configuration. One diode is an ordinary diode while other is a controlled diode. The performance of the controlled diode depends upon the magnitude of gate emitter, GE voltage and collector emitter (CE) voltage. A GE voltage Vg > Gate Emitter Threshold Voltage (VGET), modulates the conductivity of controlled diode together with hole injection from the p+ base near the collector terminal. Parameters of these diodes are estimated by applying curve fitting tool and power invariance method. The validity of the model has been checked by a simulation example. The results of simulation show appreciable closeness with actual one.
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