采用65nm频率补偿技术的高增益、高BW运放

Nihar Jouti Sama, M. Sarma
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引用次数: 1

摘要

op - amp在包括通信在内的电子工程的不同领域都有应用。在过去的几十年里,针对不同的目标应用已经实现了几种OP-AMP配置。但是随着通信标准的不断发展,为了满足多年来对高数据速率的需求,对高频率、高BW的运放的需求越来越受到重视。这使得设计挑战更高。本文提出了一种采用频率补偿方法的两级CMOS放大器,以实现更高的BW。本设计考虑了增益、增益带宽积(GBWP)、相位裕度和总功耗等参数。一个循序渐进的过程,一个有效的放大器设计是遵循使用频率补偿。我们已经实现了110 MHz的增益带宽产品(GBWP),能够驱动大容性负载。它还实现了77.7 dB增益,相位裕度为600。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A High Gain, High BW OP AMP with Frequency Compensation Techniques at 65 nm Technology
OP-AMPs finds applications in different domains of electronics engineering including communications. There has been several OP-AMP configurations realized in the last decades for different target applications. But with the evolution of communication standards, to meet the demand for high data rate over the years, requirement for a high frequency and high BW OP-AMP is gaining attention. This makes the design challenge much higher. This paper presents a two-stage CMOS amplifier which uses frequency compensation method to facilitate higher BW. Different parameters like Gain, Gain band width product (GBWP), Phase Margin and Total Power dissipation are considered in this design. A step-by-step procedure for an efficient amplifier design is followed using frequency compensation. We have achieved a gain-bandwidth product (GBWP) of 110 MHz that is capable of driving large capacitive loads. It also achieves 77.7 dB gain with a phase margin of 60o.
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