T. Stockmeier, P. Beckedahl, C. Gobl, Thomas Malzer
{"title":"SKiN:用于新包装的双面烧结技术","authors":"T. Stockmeier, P. Beckedahl, C. Gobl, Thomas Malzer","doi":"10.1109/ISPSD.2011.5890856","DOIUrl":null,"url":null,"abstract":"SKiN technology comprises the sintering of power chips to a substrate (i.e. DBC), a top side sintering of the power chips to a flexible circuit board, and the sintering of the substrate to a pin-fin heat sink. The resulting power device has a very low volume and weight and demonstrates unprecedented thermal, electrical, and reliability performance. Therefore, this technology is ideally suited to provide better power electronic solutions for a range of applications, i.e. electric vehicles, renewable energies and variable speed motor drives. The process to manufacture a 400 Amp, 600 V Dual IGBT, sintered to an aluminum pin-fin heat sink will be described in detail and electrical, thermal and reliability results will be shown.","PeriodicalId":132504,"journal":{"name":"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"77","resultStr":"{\"title\":\"SKiN: Double side sintering technology for new packages\",\"authors\":\"T. Stockmeier, P. Beckedahl, C. Gobl, Thomas Malzer\",\"doi\":\"10.1109/ISPSD.2011.5890856\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SKiN technology comprises the sintering of power chips to a substrate (i.e. DBC), a top side sintering of the power chips to a flexible circuit board, and the sintering of the substrate to a pin-fin heat sink. The resulting power device has a very low volume and weight and demonstrates unprecedented thermal, electrical, and reliability performance. Therefore, this technology is ideally suited to provide better power electronic solutions for a range of applications, i.e. electric vehicles, renewable energies and variable speed motor drives. The process to manufacture a 400 Amp, 600 V Dual IGBT, sintered to an aluminum pin-fin heat sink will be described in detail and electrical, thermal and reliability results will be shown.\",\"PeriodicalId\":132504,\"journal\":{\"name\":\"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"77\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2011.5890856\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2011.5890856","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SKiN: Double side sintering technology for new packages
SKiN technology comprises the sintering of power chips to a substrate (i.e. DBC), a top side sintering of the power chips to a flexible circuit board, and the sintering of the substrate to a pin-fin heat sink. The resulting power device has a very low volume and weight and demonstrates unprecedented thermal, electrical, and reliability performance. Therefore, this technology is ideally suited to provide better power electronic solutions for a range of applications, i.e. electric vehicles, renewable energies and variable speed motor drives. The process to manufacture a 400 Amp, 600 V Dual IGBT, sintered to an aluminum pin-fin heat sink will be described in detail and electrical, thermal and reliability results will be shown.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
