{"title":"基于α-Si纳米线技术的紧凑型刻蚀衍射光栅解复用器的设计与制造","authors":"Jun-Hwa Song, N. Zhu","doi":"10.1049/EL:20081038","DOIUrl":null,"url":null,"abstract":"Silicon nanowire waveguides and related etched diffraction grating (EDG) demultiplexers are studied by alpha-Si-on-SiO2 technology. Compact EDG demultiplexers with 10 nm spacing for both echelle and total-internal-reflection (TIR) facets have been fabricated and characterized.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Design and fabrication of compact etched diffraction grating demultiplexers based on α-Si nanowire technology\",\"authors\":\"Jun-Hwa Song, N. Zhu\",\"doi\":\"10.1049/EL:20081038\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon nanowire waveguides and related etched diffraction grating (EDG) demultiplexers are studied by alpha-Si-on-SiO2 technology. Compact EDG demultiplexers with 10 nm spacing for both echelle and total-internal-reflection (TIR) facets have been fabricated and characterized.\",\"PeriodicalId\":402931,\"journal\":{\"name\":\"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/EL:20081038\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/EL:20081038","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
摘要
采用α - si -on- sio2技术研究了硅纳米线波导及其蚀刻衍射光栅(EDG)解复用器。已经制作并表征了具有10 nm间距的梯级和全内反射(TIR)切面的紧凑EDG解复用器。
Design and fabrication of compact etched diffraction grating demultiplexers based on α-Si nanowire technology
Silicon nanowire waveguides and related etched diffraction grating (EDG) demultiplexers are studied by alpha-Si-on-SiO2 technology. Compact EDG demultiplexers with 10 nm spacing for both echelle and total-internal-reflection (TIR) facets have been fabricated and characterized.
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